Influence of current density on Al:NiO thin films via electrochemical deposition: Semiconducting and electrochromic properties

Publication date: April 2020Source: Materials Science in Semiconductor Processing, Volume 109Author(s): Y.E. FiratAbstractThe uniform aluminum-doped nickel oxide (Al:NiO) thin films were fabricated on indium tin oxide (ITO) by an efficient route of galvanostatic mode together with the help of conventional electrochemical methods. The cathodic deposition current densities were increased from 4 mA cm−2 to 7 mA cm−2 by a step of 1 mA cm−2 for the growth time of 30 s. The produced films were annealed in air at 400 °C for 1 h. The effect of deposition current on the behaviors of Al:NiO thin films were investigated by a number of methods including scanning electron microscopy (SEM), energy dispersive X-rays analysis (EDX), X-ray diffraction (XRD), Ultraviolet–Visible (UV–Vis) spectroscopy, Mott-Schottky analysis, and electrochemical impedance spectroscopy (EIS). X-ray diffraction analysis confirms the crystallinity of all deposits. SEM studies indicate that the surface morphologies of Al:NiO alter sensitively depending on the applied current density. From chronoamperometric curves of the two stage of the produced films, the fastest response times are found to be tb = 0.85 s and tc = 1.90 s for Al:NiO at an applied current density of 4 mA cm−2. It is found that the average coloration efficiency (η) reaches to a value of 50 cm2/C for Al:NiO fabricated at 5 mA cm−2. Significantly, the electrode displays long-term cyclic durability after 500 cycles ...

Source: Materials Science in Semiconductor Processing - January 28, 2020 Category: Materials Science Source Type: research