Co-electrodeposited Cu2ZnSnS4 thin films for P-N junction photovoltaics and dye sensitized solar cells

Publication date: Available online 22 January 2020Source: Materials Today: ProceedingsAuthor(s): Ambily Krishnan, Dharsana Vidyadharan, Sindhu Swaminathan, Pradeesh KannanAbstractCopper Zinc Tin Sulphide (Cu2ZnSnS4/CZTS) thin films were deposited on fluorine/indium doped tin oxide (FTO/ITO) coated glass substrates by one step electrodeposition method followed by annealing in nitrogen gas carrying sulphur vapors for 15 min. Formation of pure Cu2ZnSnS4 phase was confirmed by X-Ray Diffraction and Raman spectroscopy. Surface morphology of the films was analyzed using field emission scanning electron microscopy. Optical measurements using UV–visible spectroscopy showed absorption coefficients in the order of 104–105 cm−1 and optical band gap of ∼1.48 eV. Simple p-n junctions were formed by electrodepositing CZTS on cadmium sulphide thin films coated over ITO substrates and subsequent annealing. Current-voltage (I–V) characteristics of the junction showed a knee voltage of about 0.9 V indicating that a good open circuit voltage (Voc) can be obtained from a solar cell constructed using this junction. CZTS films deposited on FTO substrates were used as counter electrode (CE) in dye sensitized solar cell (DSSC) to demonstrate CZTS as a potential substitute to the conventional platinum CE. Performance of the DSSC with CZTS CE was evaluated in comparison to Pt by determining the I-V characteristics under 1 sun illumination. The DSSC showed Voc of 0.77 V, short circu...
Source: Materials Today: Proceedings - Category: Materials Science Source Type: research