Effects of electric and magnetic fields on electronic states and transport of a Hall bar

Publication date: Available online 8 October 2019Source: Physics Letters AAuthor(s): Gen-Hua Liu, Hui-Ying Zhou, Piao-Rong XuAbstractWe study the edge-state band and transport property for a HgTe/CdTe quantum well Hall bar under the combined coupling of a transverse electric field and a perpendicular magnetic field. It is demonstrated that a weak magnetic field can protect one of the two edge states, open or enlarge a gap of the other edge state in the Hall bar. However, an appropriate electric field can remove the gap, restoring the quantum spin Hall effect. Using the scattering matrix method, we study the electronic transport of the system. We find that the electric field can not only make the switch from pure spin-up to spin-down current, but also open or close the edge-state channels in a narrow Hall bar under a weak magnetic field, which provides us with a new way to construct a topological insulator-based spin switch and charge switch.

Source: Physics Letters A - October 10, 2019 Category: Physics Source Type: research