Surface functionalization of epitaxial graphene using ion implantation for sensing and optical applications

Publication date: Available online 24 September 2019Source: CarbonAuthor(s): Priya Darshni Kaushik, Marius Rodner, G.B.V.S. Lakshmi, Ivan G. Ivanov, G. Greczynski, Justinas Palisaitis, Jens Eriksson, Pratima Solanki, Anver Aziz, Azher M. Siddiqui, Rositsa Yakimova, Mikael Syväjärvi, G. Reza YazdiAbstractSurface functionalization has been shown to allow tailoring of graphene lattice thus making it suitable for different applications like sensing, supercapacitance devices, drug delivery system and memory devices. In this work, surface functionalization of epitaxial graphene on SiC (EG/SiC) was done by ion beam technology (30 keV Ag− ions at fluences ranging from 5 × 1012 ions/cm2 to 5 × 1014 ions/cm2), which is one of the most precise techniques for introducing modifications in materials. Atomic force microscopy showed presence of nanostructures in ion implanted samples and Photoluminescence and X-ray photoelectron spectroscopy revealed that these are probably silicon oxy carbide. High-resolution transmission electron microscopy (HRTEM) showed decoupling of buffer layer from SiC substrate at many places in ion implanted samples. Further, HRTEM and Raman spectroscopy showed amorphization of both graphene and SiC at highest fluence. Fluence dependent increase in absorbance and resistance was observed. Gas sensors fabricated on pristine and ion implanted samples were able to respond to low concentration (50 ppb) of NO2 and NH3 gases. Detecting NH3 gas at low conc...
Source: Carbon - Category: Materials Science Source Type: research