Molybdenum Disulfide Nanosheet/Quantum Dot Dynamic Memristive Structure Driven by Photoinduced Phase Transition

The photoinduced 2H ‐1T phase transition observed in 2D MoS2 nanosheets (NS) crystals with quantum dots allows the realization of a new dynamic ultrafast photoresistive memory of ultrahigh density. Resistive switching of the MoS2 NS/quantum dot (QD) structure in an electric field can be controlled using local QD excitations, which is attractive for real ‐time pattern recognition and photoconfiguration of artificial neural networks. AbstractMoS2 2D nanosheets (NS) with intercalated 0D quantum dots (QDs) represent promising structures for creating low ‐dimensional (LD) resistive memory devices. Nonvolatile memristors based 2D materials demonstrate low power consumption and ultrahigh density. Here, the observation of a photoinduced phase transition in the 2D NS/0D QDs MoS2 structure providing dynamic resistive memory is reported. The resistive switching of the MoS2 NS/QD structure is observed in an electric field and can be controlled through local QD excitations. Photoexcitation of the LD structure at different laser power densities leads to a reversible MoS2 2H ‐1T phase transition and demonstrates the potential of the LD structure for implementing a new dynamic ultrafast photoresistive memory. The dynamic LD photomemristive structure is attractive for real‐time pattern recognition and photoconfiguration of artificial neural networks in a wide spectral range of sensitivity provided by QDs.

Source: Small - September 19, 2019 Category: Nanotechnology Authors: Xiao Fu, Lei Zhang, Hak D. Cho, Tae Won Kang, Dejun Fu, Dongjin Lee, Sang Wuk Lee, Luying Li, Tianyu Qi, Abdul S. Chan, Ziyodbek A. Yunusov, Gennady N. Panin Tags: Communication Source Type: research