Performance analysis of GeSn/SiGeSn quantum well infrared photodetector in terahertz wavelength region
Publication date: Available online 30 August 2019Source: Physica E: Low-dimensional Systems and NanostructuresAuthor(s): Soumava Ghosh, Bratati Mukhopadhyay, Gopa Sen, P.K. BasuAbstractThis work presents a theoretical analysis of a GeSn/SiGeSn Quantum Well Infrared Photodetector (QWIP). The absorption coefficient is obtained by inter subband transition of the carriers inside the well. Main analysis is concentrated on finding the quantum efficiency, responsivity of QWIP. The responsivity of the detector is studied as a function of capture probability, carrier lifetime and well number. The result shows that an acceptable responsivity is obtained in mid infrared terahertz region for a particular choice of material and well number. Finally the photo generated current is estimated and compared with previously reported data.
Source: Physica E: Low dimensional Systems and Nanostructures - Category: Nanotechnology Source Type: research
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