Mechanical flexibility and strain engineered-band structures of monolayer Bi2O2Se

Publication date: Available online 14 September 2019Source: Physica E: Low-dimensional Systems and NanostructuresAuthor(s): Yi Zhang, Qiang Gao, Xueyuan Han, Yufeng PengAbstractAn emerging two-dimensional (2D) layered material, Bi2O2Se, has attracted much attention and shown great applications in integrated optoelectronic devices, such as infrared photon-detector, due to its high carrier mobility, air-stability, layer-tunable gap (0.8–2.2eV) and near-infrared optoelectronic property. Herein, the properties of the monolayer (ML) Bi2O2Se, such as the mechanical flexibility, electronic structure, optical property, are calculated by using first-principles methods. Compared with other 2D materials (such as MoS2, BN and grapheme), the ML Bi2O2Se has lower in-plane stiffness and larger Poisson's ratio, which provide the possibility of tuning its electronic structures and optical properties by using mechanical strain. Under the biaxial strain, the bandgap of the ML Bi2O2Se can be adjusted almost linearly from 0.3 eV to 2.0eV, and the optical absorption range can change from ultraviolet to visible optical region. These calculations show that the ML Bi2O2Se is promising in the applications of wearable and integrated optoelectronic devices.
Source: Physica E: Low dimensional Systems and Nanostructures - Category: Nanotechnology Source Type: research