Structural and resistive switching behaviour in Lanthanum strontium manganite - Reduced graphene oxide nanocomposite system

Publication date: Available online 13 September 2019Source: Journal of Alloys and CompoundsAuthor(s): Karuna Kumari, Ashutosh Kumar, Dinesh K. Kotnees, Jayakumar Balakrishnan, Ajay D. Thakur, S.J. RayAbstractNanocomposite made of La0.7Sr0.3MnO3 (LSMO) and reduced graphene oxide (rGO) is a promising candidate for non-volatile memory application in oxide electronics. Here, we report bipolar resistive switching (RS) behaviour in (1-x)LSMO.(x)rGO nanocomposite system, for 0.001 ≤x≤ 0.01. The structural characterisation revealed the presence of individual constituent phases. The switching behaviour is observed to be very stable over 100 switching cycles and robust against different voltage sweeping rates. An oxygen vacancy induced conduction filament based model is proposed to understand the origin of the switching phenomenon and similar observation is made through high resolution transmission electron microscopy (HRTEM) measurements.Graphical abstractResistive switching (RS) is a physical process in which the resistance of a system can be switched between the high and low resistance states through the application of an external electric field that can be used for non-volatile memory application. In this work, we have studied the switching behaviour of a novel Nanocomposite system made of La0.7Sr0.3MnO3 (LSMO) and reduced graphene oxide (rGO). For a small percentage of rGO, the switching behaviour is observed to be very stable over 100 switching cycles, robust against differen...
Source: Journal of Alloys and Compounds - Category: Chemistry Source Type: research