Direct patterning of reduced graphene oxide/graphene oxide memristive heterostructures by electron-beam irradiation

Publication date: Available online 11 September 2019Source: Journal of Materials Science & TechnologyAuthor(s): Olesya O. Kapitanova, Evgeny V. Emelin, Sergey G. Dorofeev, Gennady N. Panin, Youngmin Lee, Sejoon LeeAbstractMemristive heterostructures, composed of reduced graphene oxide with different degree of reduction, were demonstrated through a simple method of ‘direct electron-beam writing’ on graphene oxide. Irradiation with an electron beam at various doses and accelerating voltages made it possible to define high- and low-conductivity graphene-oxide areas. The electron beam-reduced graphene oxide/graphene oxide heterostructure clearly exhibited a nonlinear behavior and a well-controlled resistive switching characteristic at a low operating-voltage range (< 1 V). The proposed memristive heterostructures are promising for highly-efficient digital storage and information process as well as for analogous neuromorphic computations.
Source: Journal of Materials Science and Technology - Category: Materials Science Source Type: research