[ASAP] Ultrahigh Gauge Factor in Graphene/MoS < sub > 2 < /sub > Heterojunction Field Effect Transistor with Variable Schottky Barrier

ACS NanoDOI: 10.1021/acsnano.9b03993

Source: ACS Nano - June 26, 2019 Category: Nanotechnology Authors: Ilmin Lee †, Won Tae Kang†‡, Yong Seon Shin†‡, Young Rae Kim†, Ui Yeon Won†, Kunnyun Kim?, Dinh Loc Duong‡, Kiyoung Lee§, Jinseong Heo§, Young Hee Lee‡?, and Woo Jong Yu*† Source Type: research