[ASAP] Ultrahigh Gauge Factor in Graphene/MoS < sub > 2 < /sub > Heterojunction Field Effect Transistor with Variable Schottky Barrier
ACS NanoDOI: 10.1021/acsnano.9b03993
Source: ACS Nano - Category: Nanotechnology Authors: Ilmin Lee †, Won Tae Kang†‡, Yong Seon Shin†‡, Young Rae Kim†, Ui Yeon Won†, Kunnyun Kim?, Dinh Loc Duong‡, Kiyoung Lee§, Jinseong Heo§, Young Hee Lee‡?, and Woo Jong Yu*† Source Type: research
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