[ASAP] High Aspect Ratio ß-Ga < sub > 2 < /sub > O < sub > 3 < /sub > Fin Arrays with Low-Interface Charge Density by Inverse Metal-Assisted Chemical Etching

ACS NanoDOI: 10.1021/acsnano.9b01709

Source: ACS Nano - June 24, 2019 Category: Nanotechnology Authors: Hsien-Chih Huang †#, Munho Kim†#?, Xun Zhan‡, Kelson Chabak§, Jeong Dong Kim†, Alexander Kvit?, Dong Liu?, Zhenqiang Ma??, Jian-Min Zuo‡, and Xiuling Li*† Source Type: research