Investigations on the structural, optical and electrical properties of InxGa1-xN Thin Films

Publication date: Available online 5 June 2019Source: Materials Chemistry and PhysicsAuthor(s): C. Bagavath, J. KumarAbstractWe have investigated on the growth of InxGa1-xN thin films on silicon (100) substrate at different temperatures via nitridation of the deposited indium gallium oxide. The estimation from X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) studies clearly shows the presence of indium rich content of about 30 % in the grown InxGa1-xN thin films. The A1(LO) phonon peak in micro-Raman scattering at 670 cm-1 correlates that the films are crystallized in the characteristic wurtzite structure. In the photoluminescence measurement a broad spectrum has been observed. The carrier concentration and mobility of InxGa1-xN thin film is evaluated to be 1.71 x 1017 cm-3 and 135 cm2V-1s-1. From the obtained results, it is suggested that the prepared In-rich InxGa1-xN thin film can be used for the realisation of hetro-structure solar cell on Si substrates.
Source: Materials Chemistry and Physics - Category: Materials Science Source Type: research