Low dark current and high-responsivity graphene mid-infrared photodetectors using amplification of injected photo-carriers by photo-gating

Low dark current, high-responsivity middle-wavelength infrared (IR) graphene photodetectors using photo-gating amplification of injected photo-carriers are demonstrated. A graphene/p-indium antimonide (InSb) heterojunction and graphene/insulator region were formed. The injected photo-carriers from ...

Source: Optics Letters - May 15, 2019 Category: Physics Authors: Shoichiro Fukushima Masaaki Shimatani Satoshi Okuda Shinpei Ogawa Yasushi Kanai Takao Ono Koichi Inoue Kazuhiko Matsumoto Source Type: research