Investigation of velocity overshoot behavior in p-i-n GaAs semiconductor: The contribution of internal electric field

Publication date: Available online 23 April 2019Source: Physics Letters AAuthor(s): Nguyen Phuoc The, Ho Khac HieuAbstractIn this work, we present the investigation of the velocity overshoot behavior in p-i-n GaAs semiconductor based on the ensemble Monte Carlo simulations. Our simulations with high-resolution of time and spatial show that the velocity overshoot effect is originated from internal electric field caused by the difference of carrier density. And this effect is dependent not only on the carrier density but also on temperature. Furthermore, we have observed the velocity relaxation effect which was not recognized before because the external electric field is too high comparing to the internal electric field in semiconductor. We point out that the velocity relaxation can be seen as a damping oscillation in which the damping velocity depends strongly on carrier density but not temperature.

Source: Physics Letters A - April 25, 2019 Category: Physics Source Type: research