Large negative differential resistance behavior in arsenene nanoribbons induced by vacant defects

Publication date: Available online 19 February 2019Source: Physics Letters AAuthor(s): Wei-Hua Xiao, Fang Xie, Xiao-Jiao Zhang, Yu-Fang Chu, Jian-Ping Liu, Hai-Yan Wang, Zhi-Qiang Fan, Meng-Qiu Long, Ke-Qiu ChenAbstractWe have studied the electronic structures of arsenene nanoribbons with different edge passivations by employing first-principle calculations. Furthermore, the effects of the defect in different positions on the transport properties of arsenene nanoribbons are also investigated. We find that the band structures of arsenene nanoribbons are sensitive to the edge passivation. The current-voltage characteristics of unpassivated and O-passivated zigzag arsenene nanoribbons exhibit a negative differential resistance behavior, while such a peculiar phenomenon has not emerged in the unpassivated and O-passivated armchair arsenene nanoribbons. The vacant defects on both top and bottom edges in unpassivated armchair arsenene nanoribbon can make its current-voltage characteristic also present a negative differential resistance behavior. After expanding the areas of the top and bottom defects in unpassivated armchair arsenene nanoribbon, the peak-to-valley ratio of the negative differential resistance behavior can be enlarged obviously, which opens another way for the application of arsenene-based devices with a high switching ratio.
Source: Physics Letters A - Category: Physics Source Type: research
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