Distinguishing nitrogen-containing sites in SiO2/4H-SiC(0001) after nitric oxide annealing by X-ray absorption spectroscopy

The atomic structure of nitrogen at the SiO2/4H-SiC(0001) interface has been investigated using X-ray absorption spectroscopy (XAS) in two nitric oxide annealed samples, one of which was oxidized in dry O2 (NO-POA) prior to the experiment. The peak shapes and energies of the observed and simulated spectra are in agreement and indicate that the N-containing sites could be the substitutional C site at the interface for the NO-annealed sample and the interstitial site in the interior of SiC for the NO – POA-annealed sample. XAS analysis distinguished between the N-containing sites at the SiO2/SiC interface.

Source: Journal of Synchrotron Radiation - February 15, 2019 Category: Physics Authors: Isomura, N. Kutsuki, K. Kataoka, K. Watanabe, Y. Kimoto, Y. Tags: X-ray absorption spectroscopy XAS X-ray absorption fine structure XAFS SiC – MOS interface structure research papers Source Type: research