Transition Metal-Containing Molecular Devices: Controllable Single-spin Negative Differential Thermoelectric Resistance Effects under gate voltages

Phys. Chem. Chem. Phys., 2019, Accepted Manuscript DOI: 10.1039/C8CP07049K, PaperXifeng Yang, Fangxin Tan, Yaojun Dong, Hailin Yu, Yushen Liu Based on the non-equilibrium Green's function method combined with the density functional theory, we investigate the spin-resolved transport through transition metal(TM)(=Cr, Mn, Fe and Ru)-containing molecular devices in presence of... The content of this RSS Feed (c) The Royal Society of Chemistry

Source: RSC - Phys. Chem. Chem. Phys. latest articles - February 7, 2019 Category: Chemistry Authors: Xifeng Yang Source Type: research