Control of TiN oxidation upon atomic layer deposition of oxides

Phys. Chem. Chem. Phys., 2018, Accepted Manuscript DOI: 10.1039/C8CP06076B, PaperElena Olegovna Filatova, Sergei Sakhonenkov, Aleksei Konashuk, Valeri Afanasiev Interfaces of physical-vapor deposited (PVD)-TiN electrode with atomic-layer deposited (ALD) HfO2 layers were studied using photoelectron spectroscopy with high energies enabling the nondestructive in-depth chemical profiling and phase analysis. Our... The content of this RSS Feed (c) The Royal Society of Chemistry

Source: RSC - Phys. Chem. Chem. Phys. latest articles - October 22, 2018 Category: Chemistry Authors: Elena Olegovna Filatova Source Type: research