n- and p-type ohmic contacts at monolayer gallium nitride –metal interfaces

Phys. Chem. Chem. Phys., 2018, Advance Article DOI: 10.1039/C8CP04759F, PaperYing Guo, Feng Pan, Yajie Ren, Binbin Yao, Chuanghua Yang, Meng Ye, Yangyang Wang, Jingzhen Li, Xiuying Zhang, Jiahuan Yan, Jinbo Yang, Jing Lu Recently, two-dimensional (2D) gallium nitride (GaN) was experimentally fabricated, and has promising applications in next-generation electronic and optoelectronic devices. To cite this article before page numbers are assigned, use the DOI form of citation above. The content of this RSS Feed (c) The Royal Society of Chemistry

Source: RSC - Phys. Chem. Chem. Phys. latest articles - September 13, 2018 Category: Chemistry Authors: Ying Guo Source Type: research