Orbital Angular Momentum of Channeling Radiation from Relativistic Electrons in Thin Si Crystal

Publication date: Available online 1 August 2018Source: Physics Letters AAuthor(s): S.V. Abdrashitov, O.V. Bogdanov, P.O. Kazinski, T.A. TukhfatullinAbstractWe propose to use channeling radiation (CR) from relativistic electrons as a source of high energy twisted photons in the MeV range. We calculate numerically the orbital angular momentum (OAM) of radiation produced by electrons with the energies 155÷2500 MeV for the axial and planar channeling in the thin Si crystal. We obtain that the average OAM of CR in this case is approximately 1÷6ħ per photon with the photon energies about 1÷2 MeV.

Source: Physics Letters A - August 2, 2018 Category: Physics Source Type: research