Dielectric properties and resistance mechanism of BiFeO3 films with (1 1 0) orientation

Publication date: 15 October 2018Source: Materials Letters, Volume 229Author(s): J.T. Liang, J.M. Song, X.H. Dai, Y.S. Zhang, X.F. Liu, X.B. Li, J. Zhang, X.D. Meng, L. Zhao, B.T. LiuAbstractThe Pt/BiFeO3/La0.5Sr0.5CoO3/STO (Pt/BFO/LSCO/STO) heterojunction capacitors were fabricated on (1 1 0) SrTiO3 (STO) substrates by off-axis RF magnetron sputtering. The structure and physical properties of BiFeO3 thin films were investigated. It was found that the BFO film showed single phase (1 1 0) epitaxial perovskite structure with high crystal quality. The Pt/BFO/LSCO capacitor exhibited a saturated butterfly loop and a stable bipolar resistance switching behavior after post-annealing. The current-voltage characteristic of Pt/BFO/LSCO heterostructure is well explained by the space-charge-limited conduction mechanism.
Source: Materials Letters - Category: Materials Science Source Type: research