A novel SOI LDMOS with substrate field plate and variable-k dielectric buried layer

Publication date: September 2018Source: Results in Physics, Volume 10Author(s): Qi Li, Yi Wen, Fabi Zhang, Haiou Li, Gongli Xiao, Yonghe Chen, Tao FuAbstractA novel silicon-on-insulator (SOI) lateral double-diffused metal-oxide-semiconductor (LDMOS) structure has been proposed. The new structure features a substrate field plate (SFP) and a variable-k dielectric buried layer (VKBL). The SFP and VKBL improve the breakdown voltage by introducing new electric field peaks in the surface electric field distribution. Moreover, the SFP reduces the specific ON-resistance through an enhanced auxiliary depletion effect on the drift region. The simulation results indicate that compared to the conventional SOI LDMOS structure, the breakdown voltage is improved from 118 V to 221 V, the specific ON-resistance is decreased from 7.15 mΩ·cm2 to 3.81 mΩ·cm2, the peak value of surface temperature is declined by 38 K.Graphical abstract

Source: Results in Physics - July 10, 2018 Category: Physics Source Type: research