Multi-terminal memtransistors from polycrystalline monolayer molybdenum disulfide
Multi-terminal memtransistors from polycrystalline monolayer molybdenum disulfide
Nature 554, 7693 (2018). doi:10.1038/nature25747
Authors: Vinod K. Sangwan, Hong-Sub Lee, Hadallia Bergeron, Itamar Balla, Megan E. Beck, Kan-Sheng Chen & Mark C. Hersam
Memristors are two-terminal passive circuit elements that have been developed for use
in non-volatile resistive random-access memory and may also be useful in
neuromorphic computing. Memristors have higher
endurance and faster read/write times than flash memory and
can provide multi-bit data storage. However, although two-terminal memristors have
demonstrated capacity for basic neural functions, synapses in the human brain
outnumber neurons by more than a thousandfold, which implies that multi-terminal
memristors are needed to perform complex functions such as heterosynaptic
plasticity. Previous attempts to move beyond
two-terminal memristors, such as the three-terminal Widrow–Hoff
memristor and field-effect transistors with nanoionic
gates or floating gates, did not achieve
memristive switching in the transistor. Here we report the
experimental realization of a multi-terminal hybrid memristor and transistor (that
is, a memtransistor) using polycrystalline monolayer molybdenum disulfide
(MoS2) in a scalable fabrication process. The two-dimensional
MoS2 memtrans...
Source: Nature - Category: Research Authors: Vinod K. Sangwan Hong-Sub Lee Hadallia Bergeron Itamar Balla Megan E. Beck Kan-Sheng Chen Mark C. Hersam Tags: Letter Source Type: research
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