Growth of semiconductor silicon crystals

Publication date: Available online 30 May 2016 Source:Progress in Crystal Growth and Characterization of Materials Author(s): Koichi Kakimoto, Bing Gao, Xin Liu, Satoshi Nakano This paper focuses on the recent developments in Czochralski (CZ) crystal growth of silicon for large-scale integrated circuits (LSIs) and multi-crystalline silicon growth using a directional solidification method for solar cells. Growth of silicon crystals by the CZ method currently allows the growth of high-quality crystals that satisfy the device requirements of LSIs or power devices for electric cars. This paper covers how to obtain high-quality crystals with low impurity content and few point defects. It also covers the directional solidification method, which yields crystals with medium conversion efficiency for photovoltaic applications. We discuss the defects and impurities that degrade the efficiency and the steps to overcome these problems.

Source: Progress in Crystal Growth and Characterization of Materials - May 30, 2016 Category: Chemistry Source Type: research